Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

• Petronela Prepelita,
• Ionel Stavarache,
• Doina Craciun,
• Florin Garoi,
• Catalin Negrila,
• Beatrice Gabriela Sbarcea and
• Valentin Craciun

Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149

• , P.O. Box MG-7, Magurele 077125, Ilfov, Romania ICPE-CA, Splaiul Unirii 313, Sector 3, 74204, Bucharest, Romania Dentix MILLENNIUM SRL, Sabareni-Ilfov, Romania 10.3762/bjnano.10.149 Abstract In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere

• treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells. Keywords: conductive transparent electrodes; indium tin oxide (ITO) films; optical properties; radio-frequency magnetron sputtering (rfMS); rapid thermal annealing (RTA); Introduction

• desired structure. In this paper, the influence of rapid thermal annealing (RTA) on the structure and optical properties of ITO films, obtained by rfMS, are reported. We conducted studies to optimize the deposition parameters in order to obtain ITO thin films with excellent properties. The main

Development of an anti-pollution coating process technology for the application of an on-site PV module

• Sejin Jung,
• Wonseok Choi,
• Jung Hyun Kim and
• Jang Myoun Ko

Beilstein J. Nanotechnol. 2019, 10, 332–336, doi:10.3762/bjnano.10.32

• annealing treatments were applied to PV module glasses, i.e., furnace, rapid thermal annealing (RTA) and torch. Among these, torch annealing, which can be easily carried out at PV module installation sites, was applied to PV module glasses using different numbers of repetition. Light transmittance, contact

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• budget during the rapid thermal annealing (RTA) process (see text). The color coding of the points in (f) corresponds to the measured Si NC size. The white area in the center is a guide to the eye indicating the parameter space favorable for Si NC formation. Figure (e) corresponds to the best combination

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• nanowire diameters of about 10 nm, a dopant deactivation is observed due to the dielectrical mismatch between the silicon and its surroundings. However, our previous investigations on 5 nm thick SiGeOI layers doped by ion implantation and activated by conventional rapid thermal annealing (RTA) [39][40

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• of a uniform Au film on a silicon surface, with a successive rapid thermal annealing (RTA), can be used for the fabrication of Au nanoparticles on large surfaces. Even if the nanoparticles have a random position and diameter, the average diameter and diameter dispersion can be partially controlled by